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HD3SS213 Fiches technique(PDF) 2 Page - Texas Instruments |
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HD3SS213 Fiches technique(HTML) 2 Page - Texas Instruments |
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2 / 15 page ![]() HPDC DCz(p) DCz(n) AUXC(p) AUXC(n) Dx_SEL HPDA HPDB AUX_SEL VDD OE GND AUXA(p) AUXA(n) AUXB(p) AUXB(n) DDCCLK_A DDCDAT_A DDCCLK_B DDCDAT_B DAz(p) DAz(n) DBz(p) DBz(n) SEL SEL SEL SEL2 HD3SS213 SEL=0 SEL=1 SEL=0 SEL=1 4 4 4 4 4 4 (z = 0, 1, 2 or 3) AUXx(P) or DDCCLK_x AUXx(n) or DDCDAT_x DDCCLK_C DDCDAT_C HD3SS213 SLAS901A – SEPTEMBER 2013 – REVISED SEPTEMBER 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Figure 2. HD3SS213ZQE Functional Block Diagram 2 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: HD3SS213 |
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