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SD103C Fiches technique(PDF) 1 Page - Diodes Incorporated

No de pièce SD103C
Description  SCHOTTKY BARRIER DIODE
PDF  3 Pages
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

SD103C Fiches technique(HTML) 1 Page - Diodes Incorporated

  SD103C Datasheet HTML 1Page - Diodes Incorporated SD103C Datasheet HTML 2Page - Diodes Incorporated SD103C Datasheet HTML 3Page - Diodes Incorporated  
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SD103A - SD103C
SCHOTTKY BARRIER DIODE
Features
Low Forward Voltage Drop
Guard Ring Construction for Transient Protection
Low Reverse Recovery Time
Low Reverse Capacitance
Lead Free Finish, RoHS Compliant (Note 2)
Mechanical Data
Case: DO-35
Case Material: Glass
Moisture Sensitivity: Level 1 per J-STD-020C
Leads: Solderable per MIL-STD-202, Method
208
Terminals: Finish
⎯ Sn96.5Ag3.5. Solderable
per MIL-STD-202, Method 208
Polarity: Cathode Band
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.13 grams (approximate)
DO-35
Dim
Min
Max
A
25.40
B
4.00
C
0.60
D
2.00
All Dimensions in mm
Maximum Ratings @T
A = 25°C unless otherwise specified
Characteristic
Symbol
SD103A
SD103B
SD103C
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
30
20
V
RMS Reverse Voltage
VR(RMS)
28
21
14
V
Forward Continuous Current
IFM
350
mA
Repetitive Peak Forward Current (Note 1)
@ t
≤ 1.0s
IFRM
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3 ms Half Sine Wave
IFSM
15
A
Power Dissipation
(Note 1)
Pd
400
mW
Thermal Resistance, Junction to Ambient Air
(Note 1)
RθJA
300
°C/W
Operating Junction Temperature
Tj
125
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Electrical Characteristics @T
A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage
SD103A
(Note 3)
SD103B
SD103C
V(BR)R
40
30
20
V
IR = 100μA
Maximum Forward Voltage Drop
VFM
0.37
0.60
V
IF = 20mA
IF = 200mA
Maximum Peak Reverse Current
SD103A
(Note 3)
SD103B
SD103C
IRM
5.0
μA
VR = 30V
VR = 20V
VR = 10V
Total Capacitance
CT
50
pF
VR = 0V, f = 1.0MHz
Reverse Recovery Time
trr
10
ns
IF = IR = 50mA to 200mA,
Irr = 0.1 x IR, RL = 100Ω
Notes:
1.
Valid provided that device terminals are kept at ambient temperature.
2.
EC Directive 2002/95/EC (RoHS) revision 13.2.2003. Glass and high temperature solder exemptions applied where applicable,
see EU Directive Annex Notes 5 and 7.
3.
Short duration test pulse used to minimize self-heating effect.
DS11009 Rev. 13 - 2
1 of 3
www.diodes.com
SD103A - SD103C
© Diodes Incorporated


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