STPSC8H065 datasheet(1/14 Pages) STMICROELECTRONICS

No de pièce	STPSC8H065

Description	650 V power Schottky silicon carbide diode

PDF	14 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

Logo

1 / 14 page

This is information on a product in full production.

January 2014

DocID023603 Rev 4

1/14

STPSC8H065

650 V power Schottky silicon carbide diode

Datasheet

− production data

Features

• No reverse recovery charge in application

current range

• Switching behavior independent of

temperature

• High forward surge capability

• Insulated package TO-220AC Ins:

– Insulated voltage: 2500 V rms

– Typical package capacitance: 7 pF

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

Especially suited for use in PFC applications, this

ST SiC diode will boost the performance in hard

switching conditions. Its high forward surge

capability ensures a good robustness during

transient phases.

K

A

K

A

NC

K

A

K

A

TO-220AC

STPSC H065D

8

TO-220AC Ins

STPSC H065D

8I

DPAK

STPSC H065B-TR

8

DPAK

2

STPSC H065 -TR

8G

Table 1. Device summary

Symbol

Value

IF(AV)

8 A

VRRM

650 V

Tj (max)

175 °C

www.st.com

Numéro de pièce similaire - STPSC8H065

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STPSC8H065	364Kb / 16P	650 V, 8 A high surge silicon carbide power Schottky diode 09-Jan-2020
	STPSC8H065-Y	611Kb / 12P	Automotive 650 V, 8 A high surge silicon carbide power Schottky diode 08-Oct-2025
	STPSC8H065B-TR	364Kb / 16P	650 V, 8 A high surge silicon carbide power Schottky diode 09-Jan-2020
	STPSC8H065BY-TR	611Kb / 12P	Automotive 650 V, 8 A high surge silicon carbide power Schottky diode 08-Oct-2025
	STPSC8H065C	152Kb / 8P	High forward surge capability 07-Nov-2013

More results

Description similaire - STPSC8H065

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STPSC10H065D	122Kb / 9P	650 V power Schottky silicon carbide diode 10-Oct-2012
	STPSC20H065CW	111Kb / 8P	650 V power Schottky silicon carbide diode 10-Oct-2012
	STPSC4H065D	178Kb / 10P	650 V power Schottky silicon carbide diode November 2013 Rev 3
	STPSC6H065	218Kb / 14P	650 V power Schottky silicon carbide diode 22-Jul-2015
	STPSC16H065C	170Kb / 8P	650 V power Schottky silicon carbide diode December 2015 Rev 5
	STPSC12H065C	170Kb / 8P	650 V power Schottky silicon carbide diode 10-Dec-2015
	STPSC8H065DLF	383Kb / 12P	650 V power Schottky silicon carbide diode March 2021
	STPSC20065	631Kb / 13P	650 V power Schottky silicon carbide diode July 2017 Rev 2
	STPSC8065	503Kb / 9P	650 V power Schottky silicon carbide diode July 2017 Rev 2
	STPSC4H065DLF	381Kb / 12P	650 V power Schottky silicon carbide diode 31-Mar-2021

More results

STPSC8H065 Fiches technique(PDF) 1 Page - STMicroelectronics

STPSC8H065 Fiches technique(HTML) 1 Page - STMicroelectronics

Numéro de pièce similaire - STPSC8H065

Description similaire - STPSC8H065

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Fiches technique Télécharger

Lien URL