STB76NF80 datasheet(4/13 Pages) STMICROELECTRONICS

No de pièce	STB76NF80

Description	N-channel 80 V, 0.0095 廓, 80 A D2PAK STripFET??II Power MOSFET

PDF	13 Pages

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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4 / 13 page

Electrical characteristics

STB76NF80

4/13

Doc ID 17290 Rev 1

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

±100

VGS(th)

Gate threshold voltage

VDS= VGS , ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 40 A

0.0095

0.011

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VDS = 15 V, ID = 40 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f = 1 MHz,

VGS = 0

3700

730

240

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 60 V, ID = 80 A

VGS =10 V

117

160

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