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BAV99 Fiches technique(PDF) 2 Page - Continental Device India Limited |
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BAV99 Fiches technique(HTML) 2 Page - Continental Device India Limited |
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2 / 5 page ![]() SILICON PLANAR HIGH SPEED SWITCHING DIODES BAV99 SOT-23 Formed SMD Package ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise) per diode DESCRIPTION SYMBOL TEST CONDITION MIN UNIT Diode Capacitance Cd VR=0V, f=1MHz pF Forward Recovery Voltage VFR IF=10mA, tr=20ns V Reverse Recovery Time trr IF=10mA, to IR=10mA, measured at IR=1.0mA, RL=100Ω ns Reverse Charge When Switched Time QS IF=10mA to VR=5V, RL=100Ω pC 1.5 1.75 4.0 45 MAX 3 Pin Configuration 1 = ANODE 2 = 3 = CATHODE CATHODE ANODE/ 1 2 Continental Device India Limited Data Sheet Page 2 of 5 BAV99_Rev_1 200310E |
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