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BC167B Fiches technique(PDF) 2 Page - Continental Device India Limited

No de pièce BC167B
Description  NPN SILICON PLANAR EPITAXIAL TRANSISTORS
PDF  5 Pages
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Fabricant  CDIL [Continental Device India Limited]
Site Internet  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BC167B Fiches technique(HTML) 2 Page - Continental Device India Limited

  BC167B Datasheet HTML 1Page - Continental Device India Limited BC167B Datasheet HTML 2Page - Continental Device India Limited BC167B Datasheet HTML 3Page - Continental Device India Limited BC167B Datasheet HTML 4Page - Continental Device India Limited BC167B Datasheet HTML 5Page - Continental Device India Limited  
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NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC167A, BC167B
BC168A, BC168B, BC168C
BC169B, BC169C
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
MAX
UNITS
DC Current Gain
A
hFE
IC=0.01mA,VCE=5V
90
B
150
C
270
A
IC=2mA,VCE=5V
120
220
B
180
460
C
380
800
BC167A, 168A
IC=100mA,VCE=5V
120
BC167B, 168B
200
BC168C
400
Collector Emitter Saturation Voltage
VCE(Sat)*IC=10mA,IB=0.5mA
0.2
V
VCE(Sat)*IC=100mA,IB=5mA**
0.6
V
Base Emitter Saturation Voltage
VBE(Sat) *IC=10mA,IB=0.5mA
0.83
V
VBE(Sat) *IC=100mA,IB=5mA**
1.05
V
Base Emitter On Voltage
VBE(On)
IC=2mA,VCE=5V
0.55
0.7
V
IC=0.1mA,VCE=5V
0.55
V
IC=100mA,VCE=5V**
0.83
V
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
MAX
UNITS
DYNAMIC CHARACTERISTICS
Transistors Frequency
fT
IC=0.5mA, VCE=3V
85
MHz
f=100MHz
IC=10mA, VCE=5V
150
MHz
f=100MHz
Collector Capacitance
Ccbo
VCB=10V, IE=0
4.5
pF
f=1MHz
Emitter Capaitance
Cebo
VEB =0.5V, f =1MHz
8.0
pF
Continental Device India Limited
Data Sheet
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