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BCX20 Fiches technique(PDF) 2 Page - Continental Device India Limited

No de pièce BCX20
Description  SILICON PLANAR EPITAXIAL TRANSISTORS
PDF  4 Pages
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Fabricant  CDIL [Continental Device India Limited]
Site Internet  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BCX20 Fiches technique(HTML) 2 Page - Continental Device India Limited

  BCX20 Datasheet HTML 1Page - Continental Device India Limited BCX20 Datasheet HTML 2Page - Continental Device India Limited BCX20 Datasheet HTML 3Page - Continental Device India Limited BCX20 Datasheet HTML 4Page - Continental Device India Limited  
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Continental Device India Limited
Data Sheet
Page 2 of 4
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
BCX19
BCX20
Collector–emitter voltage (VBE = 0)
VCES
max.
50
30 V
Collector–emitter voltage (open base)
IC = 10 mA
VCE0
max.
45
25 V
Emitter–base voltage (open collector)
VEB0
max.
5
5 V
Collector current (d.c.)
IC
max.
500
mA
Collector current (peak value)
ICM
max.
1000
mA
Emitter current (peak value)
–IEM max.
1000
Base current (d.c.)
lB
max.
100
mA
Base current (peak value)
IBM
max.
200
mA
Total power dissipation up to Tamb = 25 °C*
Ptot
max.
250
mW
Storage temperature
Tstg
–55 to +150
° C
Junction temperature
Tj
max.
150
° C
THERMAL RESISTANCE
Rth j–a =
500
K/W
From junction to ambient
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; VCB = 20 V
ICB0
<
100
nA
IE = 0; VCB = 20V; Tj = 150° C
ICB0
<5
mA
Emitter cut–off current
IC = 0; VEB = 5 V
IEB0
<10
mA
Base emitter voltage ·
IC = 500 mA; VCE = 1 V
VBE
<
1,2
V
Saturation voltage
IC = 500 mA; IB = 50 mA
VCEsat <
620
mV
D.C. current gain
IC = 100 mA; VCE = 1 V
hFE
100 to 600
IC = 300 mA; VCE = 1 V
hFE
>70
IC = 500 mA; VCE = 1 V
hFE
>40
Transition frequency at f = 35 MHz
IC = 10 mA; VCE = 5 V
fT
typ.
200
MHz
Collector capacitance at f = 1 MHz
IE = Ie = 0; –VCB = 10 V
Cc
typ.
5
pF
BCX19
BCX20



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