BT136F

TO-220F

Triac Series

Absolute maximum ratings

Parameter

Symbol

Value

Unit

Test condition

peak repetitive off-stage voltage

600

V

on-state RMS current

4

A

TL<66ºC

NON repetitive surge peak on-state current

25

A

Tp=20ms, Tj=25 ºC

critical rate of rise on-state current

50

A/

µs

peak gate current

2

A

average gate power dissipation

0.5

W

storage temperature range

Tstg

-40 to +150

operating junction temperature range

Tj

125

Electrical characteristics ( Tj=25ºC) unless otherwise specified

Parameter

Symbol

Value

Unit

Test condition

gate trigger current

<10

mA

T2+G+

<10

mA

T2+G-

<10

mA

T2-G-

<25

mA

T2-G+

gate trigger voltage

<1.5

V

hold current

<30

mA

critical rate of rise off-state voltage

dv/dt

>50

V/

µs

on-state voltage

<1.7

V

off-state leakage current

<0.5

mA

60

<3.7

BT136F Rev270310E

Disclaimer

thermal resistance

ºC/W

The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in your

product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet

functionality parameters for your application. The information furnished in the Data Sheet and on the CDIL Web Site/CD are believed to be accurate

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Data Sheet

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