LLDB3 datasheet(1/4 Pages) FORMOSA

No de pièce	LLDB3

Description	DIAC

PDF	4 Pages

Scroll/Zoom	100%

Fabricant	FORMOSA [Formosa MS]

Site Internet	http://www.formosams.com

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Formosa MS

LLDB3

Formosa MS

1

DIAC

Features

1.

VBO: 32V

2.

Breakover voltage range: 28 to 36V

Applications

Functioning as a trigger diode with a fixed voltage

reference, the LLDB3 can be used in conjunction

with triacs for simplified gate control circuits or as

a starting element in fluorescent lamp ballasts.

Absolute Maximum Ratings

(Limiting values)

Parameter

Symbol

Value

Unit

Repetitive peak on-state current (tp=20µ s F=120 Hz)

ITRM

2

A

Operating junction temperature range

Tj

-40 ~ +125

?

Storage temperature range

Tstg

-40 ~ +125

?

Numéro de pièce similaire - LLDB3

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SEMTECH ELECTRONICS LTD...	LLDB3	166Kb / 1P	SILICON BIDIRECTIONAL DIACS
Jinan Jingheng (Group) ...	LLDB3	63Kb / 2P	SILICON BIDIRECTIONAL DIAC
Taiwan Semiconductor Co...	LLDB3	89Kb / 2P	150mW Bi-directional Trigger Diode
Rectron Semiconductor	LLDB3	179Kb / 4P	TRIGGER DIODES
Micro Commercial Compon...	LLDB3	314Kb / 3P	SILICON BIDIRECTIONAL DIAC

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LLDB3 Fiches technique(PDF) 1 Page - Formosa MS

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