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IXGC16N60C2 Fiches technique(PDF) 2 Page - IXYS Corporation

No de pièce IXGC16N60C2
Description  Electrically Isolated Back Surface
PDF  2 Pages
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Fabricant  IXYS [IXYS Corporation]
Site Internet  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGC16N60C2 Fiches technique(HTML) 2 Page - IXYS Corporation

  IXGC16N60C2 Datasheet HTML 1Page - IXYS Corporation IXGC16N60C2 Datasheet HTML 2Page - IXYS Corporation  
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXGC 16N60C2
IXGC 16N60C2D1
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= 12A; V
CE = 10 V,
8
12
S
Note 2.
C
ies
V
CE = 25 V, VGE = 0 V, f = 1 MHz
720
pF
C
oes
16N60C2
55
pF
16N60C2D1
65
pF
C
res
19
pF
Q
g
I
C = 20A, VGE = 15 V, VCE = 0.5 VCES
32
nC
Q
ge
6nC
Q
gc
10
nC
t
d(on)
25
ns
t
ri
15
ns
t
d(off)
60
120
ns
t
fi
35
100
ns
E
off
60
100
µJ
t
d(on)
25
ns
t
ri
18
ns
E
on
16N60C2D1
0.38
mJ
t
d(off)
115
ns
t
fi
70
ns
E
off
150
µJ
R
thJC
2.0 K/W
R
thCK
0.25
K/W
Inductive load, T
J = 125°
°°°°C
I
C = 12A; VGE = 15 V
V
CE = 400 V; RG = Roff = 22 Ω
Note 1
Inductive load, T
J = 25°
°°°°C
I
C = 12 A; VGE = 15 V
V
CE = 400 V; RG = Roff = 22 Ω
Note 1.
Notes:
1. Switching times may increase for V
CE (Clamp) > 0.8 • VCES, higher TJ,
or increased R
G.
2. Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
Reverse Diode (FRED)
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F = 10 A, VGE = 0 V
2.66
V
T
J = 125°C
1.66
V
I
RM
I
F = 12 A; -diF/dt = 100 A/µs, VR = 100 V
2.5
A
t
rr
V
GE = 0 V; TJ = 125°C
110
ns
t
rr
I
F = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V
30
ns
R
thJC
2.5 K/W
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