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CP754 Fiches technique(PDF) 2 Page - Continental Device India Limited |
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CP754 Fiches technique(HTML) 2 Page - Continental Device India Limited |
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2 / 5 page ![]() PNP SILICON PLANAR EPITAXIAL TRANSISTORS CP754 / CP755 TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL MIN MAX UNIT Collector Emitter Saturation Voltage *** VCE (sat) 0.5 V 0.5 V Base Emitter Saturation Voltage *** VBE (sat) 1.1 V Base Emitter On Voltage *** VBE (on) 1.0 V DC Current Gain *** hFE 50 50 20 Transition Frequency fT 30 MHz Output Capacitance Cobo 20 pF ***Pulse conditions. Pulse Width=300 µµs. Duty Cycle<2% CP754_755Rev_2 211204E IC=500mA,VCE=5V IC=10mA,VCE=5V IC=500mA,VCE=5V IC=1A, VCE=5V IC=10mA, VCE=20V, f=20MHz VCB=20V, IE=0, f=1MHz IC=500mA, IB=50mA IC=1A, IB=200mA TEST CONDITION IC=500mA, IB=50mA E B C Continental Device India Limited Data Sheet Page 2 of 5 |
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