CSB1626 datasheet(1/3 Pages) CDIL

No de pièce	CSB1626

Description	PNP SILICON EPITAXIAL POWER DARLINGTON TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Fabricant	CDIL [Continental Device India Limited]

Site Internet	http://www.cdilsemi.com

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PNP SILICON EPITAXIAL POWER DARLINGTON TRANSISTOR

CSB1626

TO-220

Plastic Package

Complementary CSD2495

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage(open emitter)

VCBO

110

V

Collector -Emitter Voltage(open base)

VCEO

110

V

Emitter Base Voltage(open collector)

VEBO

5.0

V

Collector Current

IC

6.0

A

Base Current

IB

1.0

A

Total Power Dissipation upto Tc=25ºC

Ptot

30

W

Junction Temperature

Tj

150

ºC

Storage Temperature

Tstg

-65 to +150

ºC

ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Cut off Current

ICBO

VCB=110V, IE=0

100

µA

Emitter Cut off Current

IEBO

VEB=5V, IC=0

2mA

Breakdown Voltages

VCEO

IC=30mA, IB=0

110

V

Collector Emitter Saturation Voltage

VCE(sat)

IC=5A, IB=5mA

2.5

V

VBE(sat)

IC=5A, IB=5mA

3V

DC Current Gain

hFE

IC=5A,VCE=4V

530

K

O/P

hFE

520

K

Transistors frequency

fT

IC=0.5A,VCE=12V

60

MHz

Output Capacitance

Cob

VCB=10V,IE=0,f=1MHz

55

pF

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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CSB1626 Fiches technique(PDF) 1 Page - Continental Device India Limited

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