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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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L6747C Fiches technique(PDF) 1 Page - STMicroelectronics |
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L6747C Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 15 page  April 2010 Doc ID 17127 Rev 1 1/15 15 L6747C High current MOSFET driver Features ■ Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ High frequency operation ■ Enable pin ■ Adaptive dead-time management ■ Flexible gate-drive: 5 V to 12 V compatible ■ High-impedance (HiZ) management for output stage shutdown ■ Preliminary overvoltage (OV) protection ■ VFDFPN8 3x3 mm package Applications ■ High current VRM / VRD for desktop / server / workstation CPUs ■ High current and high efficiency DC-DC converters Description The L6747C is a flexible, high-frequency dual- driver specifically designed to drive N-channel MOSFETs connected in synchronous-rectified buck topology. Combined with ST PWM controllers, the driver allows the implementation of complete voltage regulator solutions for modern high-current CPUs and for DC-DC conversion in general. The L6747C embeds high-current drivers for both high-side and low-side MOSFETS. The device accepts a flexible power supply of 5 V to 12 V. This allows optimization of the high-side and low- side gate-drive voltage to maximize system efficiency. Anti shoot-through management prevents the high-side and low-side MOSFETs from conducting simultaneously and, combined with adaptive dead-time control, minimizes the LS body diode conduction time. The L6747C features preliminary OV protection to protect the load from dangerous overvoltage due to MOSFET failures at startup. The driver is available in a VFDFPN8 3x3 mm package. VFDFPN8 3x3 mm Table 1. Device summary Order codes Package Packing L6747C VFDFPN8 Tube L6747CTR VFDFPN8 Tape and reel www.st.com |
Numéro de pièce similaire - L6747C |
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