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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SSF2102 Fiches technique(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSF2102 Fiches technique(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente SSF2102 2.1A , 20V , RDS(ON) 60 mΩ Ω Ω Ω N-Channel Enhancement Mode Power MOSFET 14-Jan-2014 Rev.A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSF2102 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-323 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-323 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID 2.1 A Continuous Source-Drain Current(Diode Conduction) IS 0.6 A Maximum Power Dissipation PD 200 mW Thermal Resistance from Junction to Ambient (t≤5s) RθJA 625 °C / W Operating Junction & Storage Temperature TJ, TSTG 150, -55~150 °C SOT-323 TS2 Top View Top View A L C B D G H J F K E 1 2 3 1 2 3 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.80 2.20 G 0.1 REF. B 1.80 2.45 H 0.525 REF. C 1.1 1.4 J 0.08 0.25 D 0.80 1.10 K 0.8 TYP. E 1.20 1.40 L 0.65 TYP. F 0.15 0.40 |
Numéro de pièce similaire - SSF2102 |
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Description similaire - SSF2102 |
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