The information in this document is subject to change without notice.

SILICON TRANSISTOR

2SC4956

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS MINI MOLD

FEATURES

•

Low Noise, High Gain

•

Low Voltage Operation

•

Low Feedback Capacitance

ORDERING INFORMATION

PART

QUANTITY

PACKING STYLE

NUMBER

2SC4956-T1

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin3 (Base), Pin4 (Emitter) face to perforation

side of the tape.

2SC4956-T2

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin1 (Collector), Pin2 (Emitter) face to perfora-

tion side of the tape.

*

Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4956)

Collector to Base Voltage

9V

Collector to Emitter Voltage

6V

Emitter to Base Voltage

2V

Collector Current

10

mA

Total Power Dissipation

60

mW

Junction Temperature

150

˚C

Storage Temperature

–65 to +150

˚C

©

1993

DATA SHEET

+0.2

+0.2

5˚

5˚

5˚

5˚

PACKAGE DIMENSIONS

in millimeters

PIN CONNECTIONS

1.

2.

3.

4.

Collector

Emitter

Base

Emitter

Caution; Electrostatic Sensitive Device.

Document No. P10378EJ2V0DS00 (2nd edition)

(Previous No. TD-2407)

Date Published July 1995 P

Printed in Japan