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LLSD103C Fiches technique(PDF) 1 Page - Diodes Incorporated |
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LLSD103C Fiches technique(HTML) 1 Page - Diodes Incorporated |
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1 / 2 page ![]() DS30068 Rev. 2 - 2 1 of 2 LLSD103A - 103C LLSD103A - 103C SURFACE MOUNT SCHOTTKY BARRIER DIODE Features · Low Forward Voltage Drop · Guard Ring Construction for Transient Protection · Fast Reverse Recovery Time · Low Reverse Capacitance · Case: MiniMELF, Glass · Terminals: Solderable per MIL-STD-202, Method 208 · Marking: Cathode Band Only · Polarity: Cathode Band · Weight: 0.05 grams (approx.) Mechanical Data MiniMELF Dim Min Max A 3.30 3.70 B 1.30 1.60 C 0.28 0.50 All Dimensions in mm A C B Maximum Ratings @ TA = 25°C unless otherwise specified Note: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol LLSD103A LLSD103B LLSD103C Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 30 20 V RMS Reverse Voltage VR(RMS) 28 21 14 V Forward Continuous Current (Note 1) IFM 350 mA Repetitive Peak Forward Current @ t £ 1.0s IFRM 1.0 A Non-Repetitive Peak Forward Surge Current @ t £ 1.0s @ t = 10ms IFSM 1.5 7.5 A Power Dissipation (Note 1) Pd 400 mW Thermal Resistance, Junction to Ambient Air (Note 1) RqJA 250 ° C/W Operating Temperature Range Tj -55 to +125 ° C Storage Temperature Range TSTG -55 to +150 ° C Characteristic Symbol Min Typ Max Unit Test Condition Forward Voltage Drop (Note 2) VF ¾ ¾ 0.37 0.60 V IF = 20mA IF = 200mA Peak Reverse Current (Note 2) LLSD103A LLSD103B LLSD103C IR ¾ ¾ 5.0 m A VR = 30V VR = 20V VR = 10V Total Capacitance CT ¾ 50 ¾ pF VR = 0V, f = 1.0MHz Reverse Recovery Time trr ¾ ¾ 10 ns IF = IR = 50mA to 200mA, Irr = 0.1 x IR, RL = 100W |
Numéro de pièce similaire - LLSD103C |
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Description similaire - LLSD103C |
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