IXTY05N100 datasheet(4/4 Pages) IXYS

No de pièce	IXTY05N100

Description	High Voltage Power MOSFET

PDF	4 Pages

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Fabricant	IXYS [IXYS Corporation]

Site Internet	http://www.ixys.com

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IXYS reserves the right to change limits, test conditions, and dimensions.

IXTU05N100

IXTY05N100

Fig. 11. Maximum Transient Thermal Impedance

0.1

1.0

10.0

100

1000

Pulse Width - millisecond

Fig. 7. Transconductance

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

ID - Amperes

TJ = - 40ºC

125ºC

25ºC

Fig. 8. Forward Voltage Drop of

Intrinsic Diode

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0.4

0.45

0.5

0.55

0.6

0.65

0.7

0.75

0.8

0.85

0.9

VSD - Volts

TJ = 125ºC

TJ = 25ºC

Fig. 9. Gate Charge

012

QG - NanoCoulombs

VDS = 500V

I D = 1A

I G = 1mA

Fig. 10. Capacitance

100

1,000

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

IXYS REF: T_05N100M(1TM)7-29-08

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