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FLLD263 Fiches technique(PDF) 2 Page - List of Unclassifed Manufacturers

No de pièce FLLD263
Description  SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR
PDF  2 Pages
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Fabricant  ETC2 [List of Unclassifed Manufacturers]
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FLLD263 Fiches technique(HTML) 2 Page - List of Unclassifed Manufacturers

  FLLD263 Datasheet HTML 1Page - List of Unclassifed Manufacturers FLLD263 Datasheet HTML 2Page - List of Unclassifed Manufacturers  
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SOT23 SILICON PLANAR LOW LEAKAGE
COMMON ANODE DIODE PAIR
ISSUE 2 – JANUARY 1996
7
PART MARKING DETAIL – D63
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Repetitive Peak Reverse Voltage
VRRM
100
V
Average Rectified Forward Current
IF(AV)
250
mA
Non-Repetitive Peak Forward Current (t=1µs) IFSM
3.0
A
Power Dissipation at Tamb = 25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT CONDITIONS.
Reverse Current
IR
5
5
nA
µ
A
VRRM=100V
VRRM=100V, Tamb=150°C
Reverse Recovery Time*
trr
400
ns
IF= IR=50 – 400mA
Forward Recovery Time
tfr
10
ns
IF=10mA
Diode Capacitance
Cd
4pF
VR=1V, f=1MHz
Forward Overshoot Voltage Vfr
Typ
0.9
V
IF=10mA,
Rise time=5ns ±20%
Forward Voltage
VF
1.4
V
IF=-200mA
*Time for IR to recover to 10% of IR peak
SOT23
FLLD263
DIODE PIN CONNECTION
1
23
1
3
2
FLLD258
FLLD261
FLLD263
3 - 98
3 - 99
0100
VF - Forward Voltage (V)
IR v VF
0
25
80
60
40
20
5
10
15
20
TYPICAL CHARACTERISTICS



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