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MTP3LP01Y3 Fiches technique(PDF) 3 Page - Cystech Electonics Corp.

No de pièce MTP3LP01Y3
Description  30V P-CHANNEL Enhancement Mode MOSFET
PDF  8 Pages
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Fabricant  CYSTEKEC [Cystech Electonics Corp.]
Site Internet  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTP3LP01Y3 Fiches technique(HTML) 3 Page - Cystech Electonics Corp.

  MTP3LP01Y3 Datasheet HTML 1Page - Cystech Electonics Corp. MTP3LP01Y3 Datasheet HTML 2Page - Cystech Electonics Corp. MTP3LP01Y3 Datasheet HTML 3Page - Cystech Electonics Corp. MTP3LP01Y3 Datasheet HTML 4Page - Cystech Electonics Corp. MTP3LP01Y3 Datasheet HTML 5Page - Cystech Electonics Corp. MTP3LP01Y3 Datasheet HTML 6Page - Cystech Electonics Corp. MTP3LP01Y3 Datasheet HTML 7Page - Cystech Electonics Corp. MTP3LP01Y3 Datasheet HTML 8Page - Cystech Electonics Corp.  
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CYStech Electronics Corp.
Spec. No. : 794Y3
Issued Date : 2011.12.22
Revised Date :
Page No. : 3/ 8
MTP3LP01Y3
CYStek Product Specification
Typical Characteristics(The minus sign in voltage and current is omitted)
Typical Output Characteristics
0
0.05
0.1
0.15
0.2
0.25
0.3
00.5
11.5
2
Drain-Source Voltage ---VDS(V)
VGS=1.5V
6V
2V
2.5V
3V
3.5V
TA=25°C
4V
Typical Transfer Characteristics
0
50
100
150
200
0
0.5
1
1.5
2
2.5
3
Gate-Source Voltage-VGS(V)
VDS=10V
75°C
25°C
125°C
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
2
4
6
8
10
02
4
68
10
Gate-Source Voltage-VGS(V)
TA=75°C
TA=125°C
TA=25°C
ID=30mA
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
2
4
6
8
10
02
4
6
8
10
Gate-Source Voltage-VGS(V)
TA=75°C
TA=125°C
TA=25°C
ID=50mA
Static Drain-Source On-State resistance vs Drain Current
1
10
100
0.1
1
10
Drain Current-ID(mA)
TA=125°C
TA=75°C
TA=25°C
VGS=1.5V
Static Drain-Source On-State resistance vs Drain Current
1
10
100
1
10
100
Drain Current-ID(mA)
TA=75°C
TA=25°C
TA=125°C
VGS=2.5V



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