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UTT10NP06G-S08-R Fiches technique(PDF) 3 Page - Unisonic Technologies

No de pièce UTT10NP06G-S08-R
Description  DUAL ENHANCEMENT MODE (N-CHANNEL/ P-CHANNEL)
PDF  7 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT10NP06G-S08-R Fiches technique(HTML) 3 Page - Unisonic Technologies

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UTT10NP06
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 7
www.unisonic.com.tw
QW-R502-773.D
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
N-CHANNEL
P-CHANNEL
Drain-Source Voltage
VDSS
60
-60
V
Gate-Source Voltage
VGSS
±20
±20
V
Drain Current
Continuous TA=25°C
ID
4.5
-3
A
Pulsed (Note 1)
IDM
20
-20
A
Power Dissipation
TA=25°C
PD
2.0
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note
:
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
N-Channel
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
60
V
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V, TJ=25°C
1
µA
VDS=48V, VGS=0V, TJ=125°C
10
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V
+100 nA
Reverse
VGS=-20V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
3
V
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
VGS=10V, ID=4A
36
56
mΩ
VGS=4.5V, ID=2A
44
64
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
1100 1500
pF
Output Capacitance
COSS
80
pF
Reverse Transfer Capacitance
CRSS
60
pF
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
VGS=4.5V, VDS=48V, ID=4A
120
150
nC
Gate to Source Charge
QGS
12
nC
Gate to Drain Charge
QGD
60
nC
Turn-ON Delay Time (Note 2)
tD(ON)
VDS=30V, ID=1A, RG=3.3Ω,
VGS=10V, RD=30Ω
33
ns
Rise Time
tR
26
ns
Turn-OFF Delay Time
tD(OFF)
140
ns
Fall-Time
tF
64
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note 2)
VSD
IS=1.7A, VGS=0V
1.2
V



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