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UT8205AZL-S08-R Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce UT8205AZL-S08-R
Description  N-CHANNEL ENHANCEMENT MODE
PDF  3 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT8205AZL-S08-R Fiches technique(HTML) 2 Page - Unisonic Technologies

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UT8205AZ
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-886.b
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Drain Current (Note 2)
Continuous
ID
6
A
Pulsed
IDM
20
A
Power Dissipation (TA=25°C) (Note 3)
SOT-26
PD
1.14
W
SOP-8
1.6
W
TSSOP-8
1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
3. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note)
SOT-26
θJA
110
°C/W
SOP-8
78
°C/W
TSSOP-8
125
°C/W
Note: Pulse Test : Pulse width≤300μs, Duty cycle≤2%
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
20
V
Breakdown Voltage Temperature
Coefficient
ΔBVDSS
ΔTJ
ID=1mA, Reference to 25°C
0.03
V/°C
Drain-Source Leakage Current
IDSS
VDS=20V, VGS=0V,
1
μA
Gate-Source Leakage Current
IGSS
VGS=±8V
±10
μA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
0.5
1.5
V
Drain-Source On-State Resistance (Note)
RDS(ON)
VGS=4.5V, ID=6.0A
28
mΩ
VGS=2.5V, ID=5.2A
38
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=20V, VGS=0V, f=1.0MHz
1035
pF
Output Capacitance
COSS
320
pF
Reverse Transfer Capacitance
CRSS
150
pF
SWITCHING PARAMETERS
Turn-ON Delay Time (Note)
tD(ON)
VGS=5V, VDS=10V, RD=10Ω,
RG=6Ω, ID=1A
30
ns
Turn-ON Rise Time
tR
70
ns
Turn-OFF Delay Time
tD(OFF)
40
ns
Turn-OFF Fall-Time
tF
65
ns
Total Gate Charge(Note)
QG
VDS =20V, VGS =5V, ID =6.0A
23
nC
Gate Source Charge
QGS
4.5
nC
Gate Drain Charge
QGD
7
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
VSD
IS=1.7A, VGS=0V
1.2
V
Diode Continuous Forward Current
IS
VD=VG, VS=1.3V
1.54
A
Note: Surface mounted on 1 in
2 copper pad of FR4 board.



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