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2SC2625B Fiches technique(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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2SC2625B Fiches technique(HTML) 2 Page - Nell Semiconductor Co., Ltd |
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2 / 3 page ![]() SEMICONDUCTOR Nell High Power Products RoHS RoHS ELECTRICAL CHARACTERISTICS (T = 25°C) C UNIT mA ton VCE(sat) IEBO tf PARAMETER Emitter cutoff current Forward current transfer ratio (DC current gain) Collector to emitter saturation voltage Base to emitter saturation voltage Fall time ICBO tstg V Collector cutoff current Collector to emitter voltage SYMBOL VCEO(SUS)* hFE VBE(sat) Turn-on time Storage time V = 450V, l = 0 CBO E V = 7V, l = 0 EBO C l = 1A, L = 50mH C V = 5V, CE l = 4A C l = 1mA CBO l = 4A, l = 0.8A C B MAX 1.0 0.1 1.2 1.5 1.0 2.0 1.0 l = 7.5A, l = 1.5A, l = -1.5A C B1 B2 R = 20 Ω, L P = 20µs, W X L 50mH 15V 1W Y G 6V 120W 50/60Hz mercury relay CONDITIONS µS V l = 10mA CEO VCEO VCBO VEBO Collector to base voltage Emitter to base voltage l = 0.1mA EBO 7 10 l = 4A, l = 0.8A C B *V Test circuit CEO(sus) MIN 400 450 Duty ≤ 2% Switching time test circuit P = 20 µs W lB1 lB2 lC R =20 Ω L lB1 lB2 lC 0.9lC 0.1lC tON tSTG tF Page 2 of 3 www.nellsemi.com 2SC2625B |
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