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MPSA92L-AB3-R Fiches technique(PDF) 2 Page - Unisonic Technologies |
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MPSA92L-AB3-R Fiches technique(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() MPSA92/93 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R201-019.D ABSOLUTE MAXIMUM RATING (TA=25°С unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage MPSA92 VCBO -300 V MPSA93 -200 V Collector-Emitter Voltage MPSA92 VCEO -300 V MPSA93 -200 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Collector Dissipation SOT-89 PC 0.5 W TO-92 0.62 W Junction Temperature TJ 150 °С Storage Temperature TSTG -55~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Base Breakdown Voltage MPSA92 BVCBO IC=-100µA, IE=0 -300 V MPSA93 -200 V Collector-Emitter Breakdown Voltage MPSA92 BVCEO IC=-1mA, IB=0 -300 V MPSA93 -200 V Emitter-Base Breakdown Voltage BVEBO IE=-100µA, IC=0 -5 V Collector Cut-Off Current MPSA92 ICBO VCB=-200V, IE=0 -0.25 µA MPSA93 -0.25 µA Emitter Cut-Off Current IEBO VEB=-3V, IC=0 -0.10 µA ON CHARACTERISTICS DC Current Gain(note) hFE VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-30mA 60 80 80 Collector-Emitter Saturation Voltage VCE(SAT) IC=-20mA, IB=-2mA -0.5 V Base-Emitter Saturation Voltage VBE(SAT) IC=-20mA, IB=-2mA -0.90 V SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product fT VCE=-20V, IC=-10mA, f=100MHz 50 MHz Output Capacitance MPSA92 Cob VCB=-20V, IE=0, f=1MHz 6 pF MPSA93 8 pF Note: Pulse test: PW<300µs, Duty Cycle<2%, VCE(SAT)<200mV |
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