MMBT1116AL-L-AE3-R datasheet(2/4 Pages) UTC

2 / 4 page

MMBT1116/A

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-098.C



ABSOLUTE MAXIMUM RATINGS (TA=25C,unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

MMBT1116

VCBO

-60

MMBT1116A

-80

Collector to Emitter Voltage

MMBT1116

VCEO

-50

MMBT1116A

-60

Emitter to Base Voltage

VEBO

-6

Collector Current

-1

Pulse(Note2)

ICM

-2

Total Power Dissipation

350

Junction Temperature

+150

C

Storage Temperature

TSTG

-55 ~ +150

C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width≦10ms, Duty cycle≦50%



ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Emitter Saturation

Voltage(Note)

VCE(SAT) IC=-1A, IB=-50mA

-0.2

Base-Emitter Saturation Voltage(Note)

VBE(SAT) IC=-1A, IB=-50mA

-0.9

-1.2

Base Emitter On Voltage(Note)

VBE(ON)

VCE=-2V, IC=-50mA

-600

-650

-700

Collector Cut-Off Current

ICBO

VCB=-60V, IE=0

-100

Emitter Cut-Off Current

IEBO

VEB=-6V, IC=0

-100

DC Current Gain(Note)

hFE1

VCE=-2V,

IC=-100mA

MMBT1116

135

600

MMBT1116A

135

400

hFE2

VCE=-2V, IC=-1A

Transition Frequency

VCE=-2V, IC=-100mA

120

MHz

Output Capacitance

Cob

VCB=-10V, IE=0, f=1MHz

Turn On Time

tON

VCC=-10V, IC=-100mA

IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V

0.07

μs

Storage Time

tSTG

0.7

μs

Fall Time

0.07

μs

Note: Pulse Test: Pulse width≦350μs, Duty cycle≦2%



CLASSIFICATION OF hFE1

RANK

hFE1

135 ~ 270

200 ~ 400

300 ~ 600

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