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K1875L-V-AL3-R Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce K1875L-V-AL3-R
Description  FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE
PDF  3 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

K1875L-V-AL3-R Fiches technique(HTML) 2 Page - Unisonic Technologies

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K1875
Preliminary
JFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-103.a
ABSOLUTE MAXIMUM RATINGS (T
A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate-Drain Voltage
VGDS
-20
V
Gate-Current
IG
10
mA
Drain Power Dissipation
PD
100
mW
Junction Temperature
TJ
125
°C
Storage Temperature Range
TSTG
-55~125
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
A =25
°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Gate Leakage Current
IGSS
VGS=-15V, VDS=0V
-1.0
nA
Gate-Drain Breakdown Voltage
V(BR)GDS
VDS=0V, IG=-100µA
-20
V
Drain Current
IDSS
VDS=5V, VGS=0V
6
32
mA
Gate-Source Cut-Off Voltage
VGS (OFF)
VDS=5V, ID=1µA
-2.5
V
Forward Transfer Admittance
|Yfs|
VDS=5V, VGS=0V, f=1kHz
15
25
mS
Input Capacitance
Ciss
VDS=5V, VGS=0V, f=1MHz
7.5
10
pF
Reverse Transfer Capacitance
Crss
VDG=5V, ID=0V, f=1MHz
2
3
pF
CLASSIFICATION OF IDSS
RANK
GR
BL
V
RANGE
6~12
10~20
16~32



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