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K596 Fiches technique(PDF) 2 Page - Unisonic Technologies |
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K596 Fiches technique(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() K596 N-CHANNEL JFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R216-001.B ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Gate Drain Voltage VGDO -20 V Gate Current IG 10 mA Drain Current ID 1 mA Power Dissipation PD 100 mW Junction Temperature TJ +125 °C Storage Temperature TSTG -55~+125 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Gate Drain Breakdown Voltage BVGDO IG=-100µA -20 V Gate Source Cut off Voltage VGS(OFF) VDS=5V, ID=1µA -0.6 -1.5 V Drain Current IDSS VDS=5V, VGS=0 100 800 µA Forward Transfer Admittance lYFSl VDS=5V, VGS=0, f=1KHz 0.4 1.2 mS Input Capacitance CISS VDS=5V, VGS=0, f=1MHz 3.5 pF Output Capacitance CRSS VDS=5V, VGS=0, f=1MHz 0.65 pF CLASSIFICATION OF IDSS RANK A B C D E IDSS (µA) 100-170 150-240 210-350 320-480 440-800 |
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