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12N25G-TN3-R Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce 12N25G-TN3-R
Description  12A, 250V N-CHANNEL POWER MOSFET
PDF  5 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

12N25G-TN3-R Fiches technique(HTML) 2 Page - Unisonic Technologies

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12N25
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-757.C
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
250
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous (TC=25°C)
ID
12
A
Pulsed (Note 2)
IDM
48
A
Single Pulsed Avalanche Energy
EAS
474
mJ
Power Dissipation
TO-220
PD
73
W
TO-252
30
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-220
θJA
62.5
°C/W
TO-252
100
°C/W
Junction to Case
TO-220
θJC
1.7
°C/W
TO-252
4.1
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
250
V
Drain-Source Leakage Current
IDSS
VDS=250V, VGS=0V
1
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=12A
0.34 0.5
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
3000 pF
Output Capacitance
COSS
900
pF
Reverse Transfer Capacitance
CRSS
400
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=200V, ID=12A, RG=25Ω
(Note 1, 2)
14
50
ns
Rise Time
tR
80
150
ns
Turn-OFF Delay Time
tD(OFF)
90
200
ns
Fall-Time
tF
80
170
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=12A, VGS=0V
1.4
V
Maximum Body-Diode Continuous Current
IS
12
A
Maximum Body-Diode Pulsed Current
ISM
48
A
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature



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