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FC8779G-SM1-R Fiches technique(PDF) 3 Page - Unisonic Technologies

No de pièce FC8779G-SM1-R
Description  SILICON MONOLITHIC INTEGRATDE CIRCUIT
PDF  4 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

FC8779G-SM1-R Fiches technique(HTML) 3 Page - Unisonic Technologies

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FC8779
Preliminary
CMOS IC
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-981.a
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VCC
7
V
Power Dissipation (Note 2)
PD
585
mW
Output Current (Note 3)
IOMAX
1000
mA
FG Signal Output
IFG
5
mA
FG Signal Output Voltage
VFG
7
V
Operating Temperature
TOPR
-40~+105
°C
Storage Temperature
TSTG
-55~+150
°C
Junction Temperature
TJMAX
150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. To use at temperature above TA=25°C reduce 4.68mW/°C (On 70.00mm×1.6mm glass epoxy board).
3. This value is mot to be over Pd, VCC=4.0V~6.0V At VCC=2.2V~4.0V, output current tolerance reduces.
OPERATING CONDITIONS
PARAMETER
SYMBOL
RATINGS
UNIT
Operating Supply Voltage Range
VCC
2.2~6.0
V
Hall Input Voltage Range
VH
0.4~VCC-1.1
V
Notes: 1. This product is not designed for production against radioactive rays.
2. This document may be strategic data subject to COCOM regulations.
ELECTRICAL CHARACTERISTICS (Unless otherwise specified T
A=25°C, VCC=5V)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Supply Current
ICC
5
8
mA
Input Offset Voltage
VHOFS
±6
mV
Output Voltage
VO
IO=250mA upper and lower total
0.32
0.49
V
Input-Output Gain
GIO
45
48
51
dB
FG Low Voltage
VFGL
IFG=3mA
0.3
V
Input Hysteresis Voltage
VHYS
±5
±10
±15
mV
Lock detection ON Time
TON
0.35
0.50
0.65
sec
Lock Detection OFF Time
TOFF
3.5
5.0
6.5
sec
Hall Bias Voltage
VHB
IHB=-5mA
1.1
1.3
1.5
V



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