L6747ATR datasheet(7/15 Pages) STMICROELECTRONICS

7 / 15 page

L6747A

Electrical specifications

Doc ID 17126 Rev 1

7/15

PWM and EN input

PWM

Input high - VPWM_IH

PWM rising

Input low - VPWM_IL

PWM falling

0.8

Input leakage

PWM = GND

-5

μA

tHiZ

HiZ hold-off time

See Figure 4

120

tprop_L

Propagation delays

See Figure 4

tprop_H

Input high - VEN_IH

EN rising

Input low - VEN_IH

EN falling

0.8

Gate drivers

RHIHS

HS source resistance

BOOT - PHASE = 12V; 100mA

1.4

2.0

IUGATE

HS source current (1)

BOOT - PHASE = 12V;

CUGATE to PHASE = 3.3nF

3.5

RLOHS

HS sink resistance

BOOT - PHASE = 12V; 100mA

1.0

1.5

RHILS

LS source resistance

100mA

1.4

2.0

ILGATE

LS source current (1)

CLGATE to GND = 5.6nF

3.5

RLOLS

LS sink resistance

100mA

1.0

1.5

Protections

VPRE_OV

Pre-OV threshold

PHASE rising

1.7

1.8

Parameter(s) guaranteed by design, not fully tested in production

Table 5.

Electrical characteristics (continued)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

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