CMPT930 datasheet(1/2 Pages) CENTRAL

No de pièce	CMPT930

Description	NPN SILICON TRANSISTOR

PDF	2 Pages

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Fabricant	CENTRAL [Central Semiconductor Corp]

Site Internet	http://www.centralsemi.com

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Central

Semiconductor Corp.

TM

156

CMPT930

NPN SILICON TRANSISTOR

SOT-23 CASE

DESCRIPTION

The

CENTRAL

SEMICONDUCTOR

CMPT930 type is an NPN silicon transistor

manufactured by the epitaxial planar process,

epoxy molded in a surface mount package,

designed for small signal general purpose

amplifier applications.

Marking Code is C1X.

MAXIMUM RATINGS (TA=25

oC)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

45

V

Collector-Emitter Voltage

VCEO

45

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current

IC

30

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

oC

Thermal Resistance

ΘJA

357

oC/W

ELECTRICAL CHARACTERISTICS (TA=25

oC unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=45V

10

nA

ICEO

VCE=5.0V

10

nA

ICES

VCE=45V

10

nA

IEBO

VEB=5.0V

10

nA

BVCBO

IC=10µA

45

V

BVCEO

IC=10mA

45

V

BVEBO

IE=10µA

5.0

V

VCE(SAT)

IC=10mA, IB=0.5mA

1.0

V

VBE(SAT)

IC=10mA, IB=0.5mA

0.6

1.0

V

hFE

VCE=5.0V, IC=10µA

100

300

hFE

VCE=5.0V, IC=500µA

150

hFE

VCE=5.0V, IC=10mA

600

fT

VCE=5.0V, IC=500mA, f=30MHz

30

MHz

Cob

VCB=5.0V, IE=0, f=1.0MHz

8.0

pF

NF

VCE=5.0V, IC=10mA, RS=10kΩ,

f=10Hz to 15.7kHz

3.0

dB

Numéro de pièce similaire - CMPT930

Fabricant	No de pièce	Fiches technique	Description
Central Semiconductor C...	CMPT930	328Kb / 2P	SURFACE MOUNT NPN SILICON TRANSISTOR
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