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SST405 Fiches technique(PDF) 2 Page - Calogic, LLC |
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SST405 Fiches technique(HTML) 2 Page - Calogic, LLC |
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2 / 2 page ![]() SST404 / SST405 / SST406 CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = 25 oC unless otherwise noted) Parameter/Test Condition Symbol Limit Unit Gate-Drain Voltage VGD -50 V Gate-Source Voltage VGS -50 V Forward Gate Current IG 10 mA Power Dissipation (per side) PD 300 mW (total) 500 mW Power Derating (per side) 2.4 mW/ oC (total) 4 mW/ oC Operating Junction Temperature TJ -55 to 150 oC Storage Temperature Tstg -55 to 200 oC Lead Temperature (1/16" from case for 10 seconds) TL 300 oC ELECTRICAL CHARACTERISTICS (TA = 25 oC unless otherwise noted) SYMBOL CHARACTERISTCS TYP 1 SST404 SST405 SST406 UNIT TEST CONDITIONS MIN MAX MIN MAX MIN MAX STATIC V(BR)GSS Gate-Source Breakdown Voltage -58 -50 -50 -50 V IG = -1 µA, VDS = 0V V(BR)G1 - G2 Gate-Gate Breakdown Voltage -58 ±50 ±50 ±50 IG = ±1µA, VDS = 0V, VGS = 0V VGS(OFF) Gate-Source Cut off Voltage -1.5 -0.5 -2.5 -0.5 -2.5 -0.5 -2.5 VDS = 15V, ID = 1nA IDSS Saturation Drain Current 2 3.5 0.5100.5 10 0.510 mA VDS = 15V, VGS = 0V IGSS Gate Reverse Current -2 -25 -25 -25 pA VGS = -30V, VDS = 0V -1 nA TA = 125 oC IG Gate Operating Current -2 -15 -15 -15 pA VDG = 15V, ID = 200 µA -0.8 -10 -10 -10 nA TA = 125 oC rDS(ON) Drain-Source On-Resistance 250 Ω VGS = 0V, ID = 0.1mA VGS Gate-Source Voltage -1 -2.3 -2.3 -2.3 V VDG = 15V, ID = 200 µA VGS(F) Gate-Source Forward Voltage 0.7 IG = 1mA, VDS = 0V DYNAMIC gfs Common-Source Forward Transconductance 1.5 121212 mS VDG = 15V, ID = 200 µA f = 1kHz gos Common-Source Output Conductance 1.3 2 2 2 µS gfs Common-Source Forward Transconductance 1.5 272727 VDS = 10V, VGS = 0V f = 1kHz gos Common-Source Output Conductance 10 20 20 20 Ciss Common-Source Input Capacitance 8 8 8 pF VDG = 15V, ID = 200 µA f = 1MHz Crss Common-Source Reverse Transfer Capacitance 1.5 3 3 3 en Equivalent Input Noise Voltage 10 20 20 20 nV/ Hz VDG = 15V, ID = 200 µA f = 10Hz MATCHING | VGS1 - VGS2 | Differential Gate-Source Voltage 15 20 40 mV VDG = 10V, ID = 200 µA ∆ | VGS1 - VGS2 | ∆T Gate-Source Voltage Differential Change with Temperature 25 40 80 µV/ oC TA = -55 to 25 oC V DG = 10V, ID = 200 µA 25 40 80 TA = 25 to 125 oC CMRR Common Mode Rejection Ratio 102 95 90 dB VDG = 10 to 20V, ID = 200 µA NOTES: 1. For design aid only, not subject to production testing. 2. Pulse test; PW = 300 µs, duty cycle ≤ 3%. |
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