AS1363 datasheet(12/19 Pages) AMSCO

12 / 19 page

www.ams.com/LDO

Revision 1.9

12 - 19

AS1363

Datasheet - Application In form atio n

9.3 Power Dissipation

Maximum power dissipation (PD) of the LDO is the sum of the power dissipated by the internal series MOSFET and the quiescent current

required to bias the internal voltage reference and the internal error amplifier, and is calculated as:

Watts

(EQ 4)

Internal power dissipation as a result of the bias current for the internal voltage reference and the error amplifier is calculated as:

Watts

(EQ 5)

Total LDO power dissipation is calculated as:

Watts

(EQ 6)

9.4 Junction Temperature

Under all operating conditions, the maximum junction temperature should not be allowed to exceed 125ºC (unless the data sheet specifically

allows). Limiting the maximum junction temperature requires knowledge of the heat path from junction to case (

JCºC/W fixed by the IC

manufacturer), and adjustment of the case to ambient heat path (

CAºC/W) by manipulation of the PCB copper area adjacent to the IC position.

Figure 19. Package Physical Arrangements

Figure 20. Steady State Heat Flow Equivalent Circuit

MAX

 Seriespass



LOAD MAX



IN MAX



OUT MIN



–



MAX

 Bias



IN MAX

IQ

MAX

 Total



MAX

 Seriespass

 PD

MAX



Bias



Bond Wire

Chip

PCB

Package

Lead Frame

SOTxx Package

Junction

TJ°C

Package

TC°C

PCB/Heatsink

TS°C

Ambient

TA°C

Chip

Power

JC

CS

SA

AS1363 Fiches technique(PDF) 12 Page - ams AG

AS1363 Fiches technique(HTML) 12 Page - ams AG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Fiches technique Télécharger

Lien URL