STM32F415VG datasheet(96/186 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F415xx, STM32F417xx

96/186

DocID022063 Rev 4

5.3.7

Wakeup time from low-power mode

The wakeup times given in Table 28 is measured on a wakeup phase with a 16 MHz HSI

RC oscillator. The clock source used to wake up the device depends from the current

operating mode:

•

Stop or Standby mode: the clock source is the RC oscillator

•

Sleep mode: the clock source is the clock that was set before entering Sleep mode.

All timings are derived from tests performed under ambient temperature and VDD supply

voltage conditions summarized in Table 14.

APB2

SDIO

0.64

0.54

TIM1

1.47

1.14

TIM8

1.58

1.22

TIM9

0.68

0.54

TIM10

0.45

0.36

TIM11

0.47

0.38

ADC1(5)

2.20

2.10

ADC2(5)

2.04

1.93

ADC3(5)

2.10

2.00

SPI1

0.14

0.12

USART1

0.34

0.27

USART6

0.34

0.28

1. HSE oscillator with 4 MHz crystal and PLL are ON.

2. I2SMOD bit set in SPI_I2SCFGR register, and then the I2SE bit set to enable I2S peripheral.

3. EN1 bit is set in DAC_CR register.

4. EN2 bit is set in DAC_CR register.

5. ADON bit set in ADC_CR2 register.

Table 27. Peripheral current consumption (continued)

Peripheral(1)

168 MHz

144 MHz

Unit

Table 28. Low-power mode wakeup timings

Symbol

Parameter

Min(1)

Typ(1)

Max(1)

Unit

tWUSLEEP(2)

Wakeup from Sleep mode

µs

tWUSTOP(2)

Wakeup from Stop mode (regulator in Run mode)

µs

Wakeup from Stop mode (regulator in low power mode)

Wakeup from Stop mode (regulator in low power mode

and Flash memory in Deep power down mode)

-110

tWUSTDBY(2)(3)

Wakeup from Standby mode

260

375

480

µs

1. Based on characterization, not tested in production.

2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction.

3. tWUSTDBY minimum and maximum values are given at 105 °C and –45 °C, respectively.

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