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ACST1635-8FP Fiches technique(PDF) 5 Page - STMicroelectronics |
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ACST1635-8FP Fiches technique(HTML) 5 Page - STMicroelectronics |
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5 / 13 page ![]() ACST1635-8FP Characteristics Doc ID 023630 Rev 1 5/13 Figure 12. Relative variation of critical rate of decrease of main current versus junction temperature Figure 13. Relative variation of static dV/dt immunity versus junction temperature (typical values) (dl / dt)c [T ] / [T = 150 °C] jj (dl / dt)c T (°C) j 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 typical values dV / dt [T ] / [T = 150 °C] jj dV / dt 0 1 2 3 4 5 6 7 25 50 75 100 125 150 (dV/dt) > 5 KV/µs @ 150 °C exceeding measurements capabilities V = V = 536 V DR T (°C) j Figure 14. Relative variation of the maximal clamping voltage versus junction temperature (minimum value) Figure 15. Relative variation of Leakage current versus junction temperature 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 V [T /V [T = 25 °C] CL j CL j T (°C) j 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 25 50 75 100 125 150 T (°C) j V = V = 400 V DRM RRM V = V = 600 V DRM RRM V = V = 800 V DRM RRM *B = Leakage current (IDRM = IRRM) at T = 150 °C, VDRM =VRRM = 800 V j *A = Leakage current (IDRM = IRRM) at indicated TJ and VDRM =VRRM Relative leakage current A/B* |
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