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AM29SL800CB100EC Fiches technique(PDF) 36 Page - Advanced Micro Devices

No de pièce AM29SL800CB100EC
Description  8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
PDF  41 Pages
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Fabricant  AMD [Advanced Micro Devices]
Site Internet  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29SL800CB100EC Fiches technique(HTML) 36 Page - Advanced Micro Devices

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36
Am29SL800C
PR EL I M I NAR Y
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Parameter
100
120
150
JEDEC
Std
Description
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
100
120
150
ns
tAVEL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
50
60
70
ns
tDVEH
tDS
Data Setup Time
Min
50
60
70
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
50
60
70
ns
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Programming Operation
(Notes 1, 2)
Byte
Typ
10
µs
Word
Typ
12
tWHWH2
tWHWH2
Sector Erase Operation (Notes 1, 2)
Typ
2
sec



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