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AM29SL800B Fiches technique(PDF) 30 Page - Advanced Micro Devices

No de pièce AM29SL800B
Description  8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
PDF  41 Pages
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Fabricant  AMD [Advanced Micro Devices]
Site Internet  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29SL800B Fiches technique(HTML) 30 Page - Advanced Micro Devices

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30
Am29SL800B
ADV ANCE
I N FO RMAT I O N
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Parameter
170
200
JEDEC
Std
Description
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
170
200
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tWLAX
tAH
Address Hold Time
Min
80
80
ns
tDVWH
tDS
Data Setup Time
Min
70
70
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
70
70
ns
tWHWL
tWPH
Write Pulse Width High
Min
60
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Byte
Typ
10
µs
Word
Typ
12
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
2
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Min
200
ns



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