MTSF3N02HD datasheet(4/12 Pages) MOTOROLA

4 / 12 page

MTSF3N02HD

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0.4

1.6

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Region Characteristics

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 4. Transfer Characteristics

0.04

0.02

Figure 5. On–Resistance versus

Gate–to–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 6. On–Resistance versus Drain Current

and Gate Voltage

100

Figure 7. On–Resistance Variation

with Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 8. Drain–to–Source Leakage Current

versus Voltage

VDS ≥ 10 V

TJ = –55°C

°C

100

°C

0.03

0.01

TJ = 25°C

1.4

1.6

1.8

0.02

0.05

2.3 V

0.03

0.04

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

4.5 V

VGS = 2.7 V

TJ = 25°C

TJ, JUNCTION TEMPERATURE (°C)

– 50

100

150

0.5

1.0

1.5

2.0

VGS = 4.5 V

ID = 1.9 A

125

–25

VGS = 0 V

TJ = 125°C

100

°C

1.2

2.1 V

2.5 V

1.7 V

2.9 V

1.9 V

4.5 V

VGS = 10 V

VGS = 3.8 V

TJ = 25°C

1.2

1000

0.1

°C

0.8

1.5 V

0.05

0.06

0.01

MTSF3N02HD Fiches technique(PDF) 4 Page - Motorola, Inc

MTSF3N02HD Fiches technique(HTML) 4 Page - Motorola, Inc

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Fiches technique Télécharger

Lien URL