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APT30DS60S Fiches technique(PDF) 2 Page - Microsemi Corporation

No de pièce APT30DS60S
Description  2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES
PDF  4 Pages
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Fabricant  MICROSEMI [Microsemi Corporation]
Site Internet  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT30DS60S Fiches technique(HTML) 2 Page - Microsemi Corporation

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APT30DS60B_S
DYNAMIC CHARACTERISTICS
THERMAL AND MECHANICAL CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Package Weight
Maximum Mounting Torque
Symbol
R
θJC
R
θJA
W
T
Torque
MIN
TYP
MAX
0.95
40
0.22
5.9
10
1.1
UNIT
°C/W
oz
g
lb•in
N•m
MIN
TYP
MAX
-
17
-24
-29
-2
-
-49
-
180
-6
-
-28
-
320
-21
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 30A, diF/dt = -200A/µs
V
R = 400V, TC = 25°C
I
F = 30A, diF/dt = -200A/µs
V
R = 400V, TC = 125°C
I
F = 30A, diF/dt = -1000A/µs
V
R = 400V, TC = 125°C
I
F = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(seconds)
FIGURE1a.MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvs.PULSEDURATION
1.00
0.80
0.60
0.40
0.20
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
0.193
°C/W
0.589
°C/W
0.191
°C/W
0.00442 J/
°C
0.0733 J/
°C
1.19 J/
°C
Power
(watts)
Junction
temp(
°C)
RC MODEL
Case temperature(
°C)
APT30DS60B_S(G)



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