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2SC5508 Fiches technique(PDF) 4 Page - Renesas Technology Corp

No de pièce 2SC5508
Description  NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
PDF  10 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5508 Fiches technique(HTML) 4 Page - Renesas Technology Corp

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2SC5508
Chapter Title
R09DS0055EJ0200 Rev.2.00
Page 4 of 8
Mar 5, 2013
Gain Characteristics
Collector Current IC (mA)
Collector Current IC (mA)
40
35
30
25
20
15
10
5
0
Frequency f (GHz)
0.1
1.0
10.0
MAG
MSG
|S21e|2
VCE = 2 V
IC = 20 mA
30
25
20
15
10
5
0
1
10
100
MSG
|S21e|2
f = 1 GHz
VCE = 2 V
30
25
20
15
10
5
0
1
10
100
MSG
|S21e|2
MAG
f = 2 GHz
VCE = 2 V
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Output Characteristics
Input Power Pin (dBm)
125
100
75
50
25
0
Input Power Pin (dBm)
20
15
10
5
0
–5
–20
–15
–10
–5
0
5
Pout
IC
f = 2 GHz
VCE = 2 V
20
15
10
5
0
–5
125
100
75
50
25
0
–20
–15
–10
–5
0
5
Pout
IC
f = 1 GHz
VCE = 2 V
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Remark The graphs indicate nominal characteristics.



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