| Moteur de recherche de fiches techniques de composants électroniques |
|
BAS416 Fiches technique(PDF) 3 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
BAS416 Fiches technique(HTML) 3 Page - NXP Semiconductors |
|
3 / 8 page ![]() 2004 Jan 26 3 NXP Semiconductors Product data sheet Low-leakage diode BAS416 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Refer to SOD323 (SC-76) standard mounting conditions. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage see Fig.3 IF = 1 mA − 0.9 V IF = 10 mA − 1 V IF = 50 mA − 1.1 V IF = 150 mA − 1.25 V IR reverse current see Fig.5 VR = 75 V 0.003 5 nA VR = 75 V; Tj = 150 °C 3 80 nA Cd diode capacitance VR = 0; f = 1 MHz; see Fig.6 2 − pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 0.8 3 µs SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient note 1 450 K/W |
|
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |