MBRF1090CT datasheet(1/2 Pages) TGS

No de pièce	MBRF1090CT

Description	TO-220F Plastic-Encapsulate Diodes

PDF	2 Pages

Scroll/Zoom	100%

Fabricant	TGS [Tiger Electronic Co.,Ltd]

Site Internet	http://www.tgselec.com

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1 / 2 page

A,Nov,2010

TO-220F Plastic-Encapsulate Diodes

MBR

F1060, 70, 80, 90, 100CT

SCHOTTKY BARRIER RECTIFIER

FEATURES

 Schottky Barrier Chip

 Guard Ring Die Construction for Transient Protection

 Low Power Loss,High Efficiency

 High Surge Capability

 High Current Capability and Low Forward Voltage Drop

 For Use in Low Voltage, High Frequency Inverters,Free Wheeling,

and Polarity Protection Applications

MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )

Value

Symbol

Parameter

MBRF10

60CT

MBRF10

70CT

MBRF10

80CT

MBRF10

90CT

MBRF10

100CT

Unit

VRRM

Peak repetitive reverse voltage

VRWM

Working peak reverse voltage

VR

DC blocking voltage

60

70

80

90

100

V

VR(RMS)

RMS reverse voltage

42

49

56

63

70

V

IO

Average rectified output current

10

A

IFSM

Non-Repetitive peak forward surge current

8.3ms half sine wave

120

A

PD

Power dissipation

2

W

RΘJA

Thermal resistance from junction to ambient

50

℃/W

Tj

Junction temperature

125

℃

Tstg

Storage temperature

-55~+150

℃

TO-220F

1. ANODE

2. CATHODE

3. ANODE

TIGER ELECTRONIC CO.,LTD

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MBRF1090CT Fiches technique(PDF) 1 Page - Tiger Electronic Co.,Ltd

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