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STM8AF6176 Fiches technique(PDF) 71 Page - STMicroelectronics

No de pièce STM8AF6176
Description  Automotive 8-bit MCU, with up to 128 Kbytes Flash, data EEPROM
PDF  110 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8AF6176 Fiches technique(HTML) 71 Page - STMicroelectronics

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STM8AF52/62xx, STM8AF51/61xx
Electrical characteristics
Doc ID 14395 Rev 9
71/110
10.3.6
I/O port pin characteristics
General characteristics
Subject to general operating conditions for VDD and TA unless otherwise specified. All
unused pins must be kept at a fixed voltage, using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
Table 40.
I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Low-level input voltage
-0.3 V
0.3 x VDD
VIH
High-level input voltage
0.7 x VDD
VDD + 0.3 V
Vhys
Hysteresis(1)
0.1 x
VDD
VOH
High-level output voltage
Standard I/0, VDD = 5 V,
I = 3 mA
VDD - 0.5 V
Standard I/0, VDD = 3 V,
I = 1.5 mA
VDD - 0.4 V
VOL
Low-level output voltage
High sink and true open
drain I/0, VDD = 5 V
I = 8 mA
——
0.5
V
Standard I/0, VDD = 5 V
I = 3 mA
——
0.6
Standard I/0, VDD = 3 V
I = 1.5 mA
——
0.4
Rpu
Pull-up resistor
VDD = 5 V, VIN = VSS
35
50
65
k
Ω
tR, tF
Rise and fall time
(10% - 90%)
Fast I/Os
Load = 50 pF
——
35(2)
ns
Standard and high sink I/Os
Load = 50 pF
125(2)
Fast I/Os
Load = 20 pF
20(2)
Standard and high sink I/Os
Load = 20 pF
50(2)
Ilkg
Digital input pad leakage
current
VSS VIN VDD
——
±1
µA
Ilkg ana
Analog input pad leakage
current
VSS VIN VDD
-40 °C < TA < 125 °C
±250
nA
VSS VIN VDD
-40 °C < TA < 150 °C
±500
Ilkg(inj)
Leakage current in
adjacent I/O(3)
Injection current ±4 mA
±1(3)
µA
IDDIO
Total current on either
VDDIO or VSSIO
Including injection currents
60
mA
1.
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested in production.



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