STB140NF75 datasheet(3/18 Pages) STMICROELECTRONICS

No de pièce	STB140NF75

Description	N-channel 75V - 0.0065 - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET

PDF	18 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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STB140NF75 - STP140NF75-1 - STP140NF75

Electrical ratings

3/18

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

VDGR

Drain-gate voltage (RGS = 20 kΩ)75

VGS

Gate- source voltage

± 20

(1)

Value limited by wire bonding

Drain current (continuous) at TC = 25°C

120

(1)

Drain current (continuous) at TC = 100°C

100

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

480

Ptot

Total dissipation at TC = 25°C

310

Derating Factor

2.08

W/°C

dv/dt (3)

ISD ≤120A, di/dt ≤400A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX

Peak diode recovery voltage slope

V/ns

EAS

(4)

Starting Tj = 25 °C, ID = 60A, VDD = 30V

Single pulse avalanche energy

750

Tstg

Storage temperature

-55 to 175

°C

Max. operating junction temperature

Table 2.

Thermal data

Rthj-case

Thermal resistance junction-case max

0.48

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering purpose(1)

for 10 sec. 1.6mm from case

300

°C

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