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APT6029BLLG Fiches technique(PDF) 4 Page - Microsemi Corporation

No de pièce APT6029BLLG
Description  POWER MOS 7 MOSFETc
PDF  5 Pages
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Fabricant  MICROSEMI [Microsemi Corporation]
Site Internet  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT6029BLLG Fiches technique(HTML) 4 Page - Microsemi Corporation

  APT6029BLLG Datasheet HTML 1Page - Microsemi Corporation APT6029BLLG Datasheet HTML 2Page - Microsemi Corporation APT6029BLLG Datasheet HTML 3Page - Microsemi Corporation APT6029BLLG Datasheet HTML 4Page - Microsemi Corporation APT6029BLLG Datasheet HTML 5Page - Microsemi Corporation  
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APT6029BLL_SLL
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
10,000
1,000
100
10
200
100
10
1
1
10
100
600
0
10
20
30
40
50
0
10 20 30 40 50 60 70 80 90 100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
84
50
10
1
16
12
8
4
0
10mS
1mS
100µS
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
VDS=250V
VDS=100V
VDS=400V
I
D = 21A
TJ=+150°C
TJ=+25°C
Crss
Ciss
Coss
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
101520
2530
35
0
5
1015
202530
35
0
5
10
15
20
25
30
35
0
5
10 15 20 25 30
35 40 45 50
50
40
30
20
10
0
700
600
500
400
300
200
100
0
50
40
30
20
10
0
800
700
600
500
400
300
200
100
0
V
DD = 400V
R
G = 5Ω
T
J = 125°C
L = 100µH
V
DD = 400V
R
G = 5Ω
T
J = 125°C
L = 100µH
V
DD = 400V
I
D = 21A
T
J = 125°C
L = 100µH
E
ON includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
V
DD
= 400V
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
E
ON includes
diode reverse recovery.



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