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ICS663 Fiches technique(PDF) 4 Page - Integrated Device Technology

No de pièce ICS663
Description  PLL BUILDING BLOCK Phase detector and VCO blocks can be used Lower power CMOS process
PDF  8 Pages
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Fabricant  IDT [Integrated Device Technology]
Site Internet  http://www.idt.com
Logo IDT - Integrated Device Technology

ICS663 Fiches technique(HTML) 4 Page - Integrated Device Technology

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ICS663
PLL BUILDING BLOCK
PLL BUILDING BLOCK
IDT™ / ICS™ PLL BUILDING BLOCK
4
ICS663
REV E 012006
AC Electrical Characteristics
VDD = 3.3 V ±5%, Ambient Temperature -40 to +85
° C, unless stated otherwise
VDD = 5.0 V ±10%, Ambient Temperature -40 to +85
° C, unless stated otherwise
Note 1: Minimum input frequency is limited by loop filter design. 1 kHz is a practical minimum limit.
Thermal Characteristics
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Output Clock Frequency
(from pin CLK)
fCLK
SEL = 1
1
100
MHz
SEL = 0
0.25
25
MHz
Input Clock Frequency
(into pins REFIN or FBIN)
fREF
Note 1
8
MHz
Output Rise Time
tOR
0.8 to 2.0V
1.2
2
ns
Output Fall Time
tOF
2.0 to 0.8V
0.75
1.5
ns
Output Clock Duty Cycle
tDC
At VDD/2
40
50
60
%
Jitter, Absolute peak-to-peak
tJ
250
ps
VCO Gain
KO
200
MHz/V
Charge Pump Current
Icp
2.5
µA
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Output Clock Frequency
(from pin CLK)
fCLK
SEL = 1
1
120
MHz
SEL = 0
0.25
30
MHz
Input Clock Frequency
(into pins REFIN or FBIN)
fREF
Note 1
8
MHz
Output Rise Time
tOR
0.8 to 2.0 V
0.5
1
ns
Output Fall Time
tOF
2.0 to 0.8 V
0.5
1
ns
Output Clock Duty Cycle
tDC
At VDD/2
45
50
55
%
Jitter, Absolute peak-to-peak
tJ
150
ps
VCO Gain
KO
200
MHz/V
Charge Pump Current
Icp
2.5
µA
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Thermal Resistance Junction to
Ambient
θJA
Still air
150
° C/W
θJA
1 m/s air flow
140
° C/W
θJA
3 m/s air flow
120
° C/W
Thermal Resistance Junction to Case
θJC
40
° C/W



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