STP52N25M5 datasheet(3/12 Pages) STMICROELECTRONICS

No de pièce	STP52N25M5

Description	N-channel 250 V, 0.055 廓, 28 A, TO-220 MDmeshTM V Power MOSFET

PDF	12 Pages

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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STP52N25M5

Electrical ratings

Doc ID 17776 Rev 1

3/12

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate- source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

112

PTOT

Total dissipation at TC = 25 °C

110

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by TJ max)

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

230

dv/dt(2)

ISD ≤ 28 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS.

Peak diode recovery voltage slope

V/ns

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

1.14

°C/W

Rthj-amb

Thermal resistance junction-pcb max

62.5

°C/W

Maximum lead temperature for soldering purpose

300

°C/W

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