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CSD17381F4 Fiches technique(PDF) 5 Page - Texas Instruments

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No de pièce CSD17381F4
Description  30-V, N-Channel NexFET??Power MOSFETs
PDF  11 Pages
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Fabricant  TI [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI - Texas Instruments

CSD17381F4 Fiches technique(HTML) 5 Page - Texas Instruments

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background image
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
−50
−25
0
25
50
75
100
125
150
175
TA - AmbientTemperature (ºC)
Typical RthetaJA =90ºC/W(max Cu)
G001
0.01
0.1
1
10
100
0.01
0.1
1
10
50
VDS - Drain-to-Source Voltage (V)
1ms
10ms
100ms
1s
DC
Single Pulse
Typical RthetaJA =250ºC/W(min Cu)
G001
0.1
1
10
100
0.001
0.01
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TAV - Time in Avalanche (mS)
TC = 25ºC
TC = 125ºC
G001
CSD17381F4
www.ti.com
SLPS411A – APRIL 2013 – REVISED JULY 2013
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
TEXT ADDED FOR SPACING
Figure 12. Maximum Drain Current vs. Temperature
Copyright © 2013, Texas Instruments Incorporated
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