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SST12LP20 Fiches technique(PDF) 5 Page - Microchip Technology

No de pièce SST12LP20
Description  2.4 GHz High-Efficiency, High-Gain Power Amplifier
PDF  13 Pages
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Fabricant  MICROCHIP [Microchip Technology]
Site Internet  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST12LP20 Fiches technique(HTML) 5 Page - Microchip Technology

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©2013 Silicon Storage Technology, Inc.
DS70005049C
05/13
5
2.4 GHz High-Efficiency, High-Gain Power Amplifier
SST12LP20
Data Sheet
Electrical Specifications
The RF and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and
current specifications, Table 4 for RF specifications, and Figures 3 through 8 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure beyond absolute maximum stress rat-
ing conditions may affect device reliability.)
Input power to pin 1 (PIN). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power from pin 4 (POUT)1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +25.5 dBm
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-
imum rating of average output power could cause permanent damage to the device.
Supply Voltage at pins 5 and 6(VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.8V
Reference voltage to pin 8 (VREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.0V
DC supply current (ICC)2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mA
2. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal
Operating Temperature (TA). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Table 2: Operating Range
Range
Ambient Temp
VDD
Industrial
-40°C to +85°C
3.3V
T2.1 75049
Table 3: DC Electrical Characteristics at 25°C
Symbol
Parameter
Min.
Typ
Max.
Unit
VCC
Supply Voltage at pins 5 and 6
3.0
3.3
4.2
V
ICQ
Idle current to meet EVM ~3% @ 18 dBm Output Power, 802.11g OFDM
54 Mbps signal
75
mA
VREG
Reference Voltage for pin 8
3.05
3.10
3.15
V
ICC
Current consumption to meet 802.11g OFDM 54 Mbps spectrum
mask @ 21 dBm
140
mA
Current consumption to meet 802.11b DSSS 54 Mbps spectrum
mask @ 21 dBm
140
mA
Current consumption to meet EVM ~3% @ 18 dBm Output Power
with 802.11g OFDM 54 Mbps signal
110
mA
T3.1 75049



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