STP4NK60Z datasheet(6/28 Pages) STMICROELECTRONICS

No de pièce	STP4NK60Z

Description	N-channel 600 V, 1.76 Ω, 4 A SuperMESH™Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP

PDF	28 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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6 / 28 page

Electrical characteristics

STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP

6/28

Doc ID 8882 Rev 7

Table 8.

Gate-source Zener diode

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Source-drain current

Source-drain current (pulsed)

VSD

(2)

Pulse width limited by safe operating area

Forward on voltage

ISD = 4 A, VGS = 0

1.6

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 4 A, di/dt = 100 A/µs

VDD = 24 V, Tj = 150 °C

(see

Figure 19)

400

1700

8.5

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

BVGSO

Gate-source breakdown voltage Igs=± 1 mA (open drain)

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