AM4530CE datasheet(1/3 Pages) ANALOGPOWER

No de pièce	AM4530CE

Description	P & N-Channel 32-V (D-S) MOSFET

PDF	3 Pages

Scroll/Zoom	100%

Fabricant	ANALOGPOWER [Analog Power]

Site Internet	http://www.analogpowerinc.com/index.html

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AM4530CE

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM4530CE_A

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r

DS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

VDS (V)

rDS(on) m(Ω)ID (A)

82 @ VGS = 4.5V

4.2

50 @ VGS = 10V

5.3

80 @ VGS = -4.5V

-4.2

52 @ VGS = -10V

-5.2

30

PRODUCT SUMMARY

-30

P & N-Channel 32-V (D-S) MOSFET

•Low r

DS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

SOIC-8 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol N-Channel P-Channel Units

VDS

30

-30

VGS

±20

TA=25

oC

5.3

-5.2

TA=70

oC4.2

-4.1

IDM

20

-20

IS

1.3

-1.3

A

TA=25

oC

2.1

TA=70

oC1.3

1.3

TJ, Tstg

oC

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

ID

A

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

-55 to 150

Symbol

Maximum Units

t <= 10 sec

62.5

oC/W

Steady-State

110

oC/W

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a

RθJA

ESD Protected

2000V

D

2

P-Channel MOSFET

D

1

G

1

N-Channel MOSFET

S

1

G

1

S

2

G

2

1

2

3

4

SOIC-8

Top View

D

1

D

1

D

2

D

2

8

7

6

5

S

1

G

2

S

2

Numéro de pièce similaire - AM4530CE

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